Issue 37, 2010
From the journal:

Chemical Communications

Photocatalysis-induced selective decoration of semiconducting single walled carbon nanotubes: hole-doping effect†

Satoshi Kubota,a   Daisuke Shimamoto,b   Jin Sung Park,b   Hiromasa Nishikiori,a   Nobuaki Tanaka,a   Yoong Ahm Kim,*a   Tsuneo Fujii,ac   Morinobu Endoab  and  Milred S. Dresselhausd  

* Corresponding authors

a Faculty of Engineering, Shinshu University, Wakasato, Nagano 380-8553
E-mail: yak@endomoribu.shinshu-u.ac.jp
Fax: +81-26-269-5208
Tel: +81-26-269-5212

b Institute of Carbon Science & Technology, Shinshu University, 4-17-1 Wakasato, Nagano 380-8553, Japan

c Nagano Prefectural Institute of Technology, Shimonogou, Ueda, Nagano 386-1211, Japan

d Massachusetts Institute of Technology Cambridge, Massachusetts 02139-4307, USA

Abstract

We have examined the time-dependent effect of the titanium oxide photocatalysis on N-methyl-2-pyrrolidone individually dispersed single walled carbon nanotube (SWNT) suspensions. From optical spectroscopic studies, we found a selective decoration of the semiconducting tubes. Such selectivity is attributed to the preferential attack of the photogenerated active species on the hole-doped semiconducting SWNTs.

Graphical abstract: Photocatalysis-induced selective decoration of semiconducting single walled carbon nanotubes: hole-doping effect

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Article information

DOI
https://doi.org/10.1039/C0CC01876G
Article type
Communication
Submitted
14 Jun 2010
Accepted
03 Aug 2010
First published
23 Aug 2010

Chem. Commun., 2010,46, 6977-6979

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Photocatalysis-induced selective decoration of semiconducting single walled carbon nanotubes: hole-doping effect

S. Kubota, D. Shimamoto, J. S. Park, H. Nishikiori, N. Tanaka, Y. A. Kim, T. Fujii, M. Endo and M. S. Dresselhaus, Chem. Commun., 2010, 46, 6977 DOI: 10.1039/C0CC01876G

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