High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn2SiO4nanowires

Hongqiang Wang; Guanghai Li; Lichao Jia; Liang Li; Guozhong Wang

doi:10.1039/B906787F

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High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn₂SiO₄nanowires†

Hongqiang Wang,^a Guanghai Li,*^a Lichao Jia,^a Liang Li^a and Guozhong Wang^a

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* Corresponding authors

^a Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, P.O. Box 1129, Hefei 230031, P.R. China
E-mail: ghli@issp.ac.cn
Fax: +0086-(0)551-559-1437
Tel: +0086-(0)551-559-1434

Abstract

A high-temperature anisotropic silicon-etching strategy is demonstrated to steer the growth of the horizontally localized parallel Zn₂SiO₄nanowires.

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Supplementary files

Expanding of the triangular micropatterns and themonochromatic photoluminescence emission of the silicon-based Zn₂SiO₄ nanowires PDF (268K)

Article information

DOI: https://doi.org/10.1039/B906787F
Article type: Communication
Submitted: 07 Apr 2009
Accepted: 27 Apr 2009
First published: 19 May 2009

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Chem. Commun., 2009, 3786-3788

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High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn₂SiO₄nanowires

H. Wang, G. Li, L. Jia, L. Li and G. Wang, Chem. Commun., 2009, 3786 DOI: 10.1039/B906787F

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