Issue 34, 2005
From the journal:

Chemical Communications

Evidence of carbon–carbon bond formation on GaAs(100) via Fischer–Tropsch methyleneinsertion reaction mechanism†

Neil T. Kemp‡a  and  Nagindar K. Singh*a  

* Corresponding authors

a School of Chemistry, The University of New South Wales, Australia
E-mail: N.Singh@unsw.edu.au
Fax: +61-2-9385-6141
Tel: +61-2-9385-4687

Abstract

Sequential multiple methylene (CH2) insertions into adsorbed methyl species on clean gallium-rich GaAs(100)-(4 × 1) occurs to form higher alkenes (ethene, propene, butene) and two higher alkyl iodides (iodoethane, iodopropane), not reported for a semiconductor surface previously.

Graphical abstract: Evidence of carbon–carbon bond formation on GaAs(100) via Fischer–Tropsch methylene insertion reaction mechanism

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Article information

DOI
https://doi.org/10.1039/B506195D
Article type
Communication
Submitted
05 May 2005
Accepted
05 Jul 2005
First published
02 Aug 2005

Chem. Commun., 2005, 4348-4350

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Evidence of carbon–carbon bond formation on GaAs(100) via Fischer–Tropsch methylene insertion reaction mechanism

N. T. Kemp and N. K. Singh, Chem. Commun., 2005, 4348 DOI: 10.1039/B506195D

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