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Issue 28, 2005
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Vertically well aligned P-doped ZnO nanowires synthesized on ZnO–Ga/glass templates

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Abstract

Vertically well aligned P-doped ZnO nanowires were prepared on ZnO–Ga/glass templates at 550 °C by reactive evaporation without metal catalysts and the nanowires were found to be single crystalline with the würtzite structure, oriented in the c-axis direction; the P-doping shortened the physical lengths of the ZnO nanowires without changing their diameter, and furthermore, the introduction of P atoms resulted in a much weaker and broader ZnO band edge emission.

Graphical abstract: Vertically well aligned P-doped ZnO nanowires synthesized on ZnO–Ga/glass templates

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Publication details

The article was received on 07 Apr 2005, accepted on 16 May 2005 and first published on 10 Jun 2005


Article type: Communication
DOI: 10.1039/B504881H
Citation: Chem. Commun., 2005,0, 3571-3573
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    Vertically well aligned P-doped ZnO nanowires synthesized on ZnO–Ga/glass templates

    C. Hsu, S. Chang, Y. Lin, S. Tsai and I. Chen, Chem. Commun., 2005, 0, 3571
    DOI: 10.1039/B504881H

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