Issue 21, 2001

IR detection of NO2 using p+ porous silicon as a high sensitivity sensor

Abstract

Mesoporous silicon doped with 3.0 × 1019 B atoms cm−3 (p+-type) is an insulating material which dramatically increases its electrical conductivity when exposed to traces of gaseous NO2; nitrogen dioxide chemisorption at the surface generates carriers, the population of which is readily evaluated through the intensity of IR absorption.

Graphical abstract: IR detection of NO2 using p+ porous silicon as a high sensitivity sensor

Article information

Article type
Communication
Submitted
12 Jul 2001
Accepted
31 Aug 2001
First published
03 Oct 2001

Chem. Commun., 2001, 2196-2197

IR detection of NO2 using p+ porous silicon as a high sensitivity sensor

F. Geobaldo, B. Onida, P. Rivolo, S. Borini, L. Boarino, A. Rossi, G. Amato and E. Garrone, Chem. Commun., 2001, 2196 DOI: 10.1039/B106188G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements