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Issue 21, 2001
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IR detection of NO2 using p+ porous silicon as a high sensitivity sensor

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Abstract

Mesoporous silicon doped with 3.0 × 1019 B atoms cm−3 (p+-type) is an insulating material which dramatically increases its electrical conductivity when exposed to traces of gaseous NO2; nitrogen dioxide chemisorption at the surface generates carriers, the population of which is readily evaluated through the intensity of IR absorption.

Graphical abstract: IR detection of NO2 using p+ porous silicon as a high sensitivity sensor

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Publication details

The article was received on 12 Jul 2001, accepted on 31 Aug 2001 and first published on 03 Oct 2001


Article type: Communication
DOI: 10.1039/B106188G
Citation: Chem. Commun., 2001, 2196-2197
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    IR detection of NO2 using p+ porous silicon as a high sensitivity sensor

    F. Geobaldo, B. Onida, P. Rivolo, S. Borini, L. Boarino, A. Rossi, G. Amato and E. Garrone, Chem. Commun., 2001, 2196
    DOI: 10.1039/B106188G

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