A two-step low pressure chemical vapour deposition process for the production of tungsten metal thin films
Abstract
A two-step process for the production of W(m) thin films on Si(100) and SiO2/Si(100) is described involving the initial low pressure chemical vapour deposition of tungsten carbide from (ButCH2)3W≡CBut at 350 °C followed by a post-treatment with H2 (500–700 °C) or H2 plasma at 350–700 °C.