Issue 19, 2011

Direct and simultaneous determination of Co and Cu on a silicon wafer using a chemiluminescence system

Abstract

In this work, we developed a drop-type chemiluminescence (CL) system with a partial least squares (PLS) calibration in which the coaxial optical fiber sensing head was developed for sampling and detection to determine Cu2+ and Co2+ on a silicon wafer directly. The use of time-resolved signal generation and PLS calibration in addition to CL allowed us to determine the metal ions simultaneously and selectively, based on the kinetic difference of Cu and Co ions in the luminol–H2O2 system. Two component mixtures with a set of 15 wafer fragments were orthogonally calibrated. After prediction test, the method was applied to an intentionally contaminated silicon wafer and validated by inductively coupled plasma-mass spectrometer (ICP-MS) measurement with a HF–HNO3 scanning solution. The average concentrations of Cu2+ and Co2+ of 3.45 (±0.95) × 1013 and 2.30 (±1.18) × 1011 atoms per cm2, respectively, were obtained, which were very close to the ICP-MS results of 3.70 × 1013 for Cu2+ and 2.46 × 1011 atoms per cm2 for Co2+. In conclusion, this drop mode CL showed almost more than 10 times better reproducibility than the typical batch mode for the profile measurement. Moreover, the adoption of PLS calibration added the function of selectivity for the simultaneous determination to this CL system, in addition to the direct mapping capability for the solid surface analysis.

Graphical abstract: Direct and simultaneous determination of Co and Cu on a silicon wafer using a chemiluminescence system

Article information

Article type
Communication
Submitted
13 May 2011
Accepted
27 Jul 2011
First published
17 Aug 2011

Analyst, 2011,136, 3872-3876

Direct and simultaneous determination of Co and Cu on a silicon wafer using a chemiluminescence system

Y. I. Sung, J. W. Jang and H. B. Lim, Analyst, 2011, 136, 3872 DOI: 10.1039/C1AN15393E

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