An all-printed flexible field effect transistor based on tellurene nanosheets with graphene electrodes

Abstract

The rapid development of flexible electronics presents more urgent demands for high-performance devices, such as flexible transistors, as they are essential units for various flexible circuits and systems. Among various device fabrication methods, the emerging all-printing preparation route can integrate different core materials and efficiently maintain their performance while reducing cost and environmental damage, thereby attracting increased attention. Here, we propose a bottom-up printing fabrication strategy to construct a flexible field-effect transistor using the burgeoning two-dimensional semiconductor tellurene as the channel material, graphene as the electrode, and Al₂O₃ as the gate dielectric. This fabrication process operates efficiently and conveniently, and is environmentally friendly, enabling an on/off ratio of over 10². Benefiting from the effective gate modulation of Al₂O₃ and the light response of tellurene, the flexible transistor can function as a fully flexible artificial synaptic device, demonstrating typical postsynaptic current and plasticity characteristics. Especially when photostimulation is changed, modulation of synaptic plasticity can be observed, indicating its broad applicability in future neuromorphic computing technology. These results provide a printable tellurene-based flexible transistor and may promote the development of flexible electronic devices in future information technology and bionic intelligence.