Constructing a Visible-Light-Excited Z-scheme Heterojunction by Engineering the Directional N-C/Cu Insertion layer: Overcoming the Work Function Mismatches

Abstract

The construction of S-scheme heterojunctions is constrained by stringent work function (Φ) matching between oxidation and reduction photocatalysts, which limits material selection. Here, we present an innovative interfacial engineering strategy to overcome Φ-mismatched barriers by introducing a nitrogen-doped carbon (N-C) mediator and Cu nanoparticles at the WO3/Cu2O interface. Through a "post-deposition and pyrolysis" approach, we fabricated a tightly integrated Z-scheme WO3/N-C/Cu/Cu2O heterojunction, where the N-C layer and metallic Cu synergistically redirect photogenerated carrier recombination, preserving the high redox potentials of WO3 (VB: +2.62 V) and Cu2O (CB: -1.41 V). Femtosecond transient absorption spectroscopy and electron paramagnetic resonance data revealed that interfacial electrons from WO3 transferred to N-C and recombined with holes originated from Cu2O on Cu via the directional N-C/Cu insertion layer. The optimized heterojunction exhibits exceptional photocatalytic performance under blue light (450 nm), achieving a 99% yield in homo-coupling of terminal alkyne to1,3-conjugated diynes and a hydrogen evolution rate 300-fold higher than that of conventional WO3/Cu2O. This work provides a universal paradigm for designing Z-scheme systems with mismatched components, unlocking new possibilities for solar energy conversion and organic synthesis.

Supplementary files

Article information

Article type
Edge Article
Submitted
18 Jul 2025
Accepted
27 Sep 2025
First published
30 Sep 2025
This article is Open Access

All publication charges for this article have been paid for by the Royal Society of Chemistry
Creative Commons BY-NC license

Chem. Sci., 2025, Accepted Manuscript

Constructing a Visible-Light-Excited Z-scheme Heterojunction by Engineering the Directional N-C/Cu Insertion layer: Overcoming the Work Function Mismatches

H. Gao, X. He, J. Li, Q. Zhu, C. Qin, L. Sun, S. Zhi, L. Yang, W. Zhan, J. Zhao and X. Han, Chem. Sci., 2025, Accepted Manuscript , DOI: 10.1039/D5SC05362E

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