The structural, optical and photovoltaic properties of Zn-doped MAPbI2Br perovskite solar cells

Abstract

The spin coating method was used to deposit MAPbI₂Br films on FTO-glass substrates. Zn²⁺ (zinc) doping was used for these films at intensity rates of 2% and 4%, respectively. XRD analysis proved that MAPbI₂Br films had a cubic structure and a crystalline character. 2% Zn doping into the MAPbI₂Br film had a modest large grain size (38.09 nm), E_g (1.95 eV), high refractive index (2.66), and low extinction coefficient (1.67), according to XRD and UV-vis analyses. To facilitate and enhance carrier transit, at contacts as well as throughout the bulk material, the perovskite's trap-state densities decreased. The predicted MAPbI₂Br valence and conduction band edges are −5.44 and −3.52, respectively. The conduction band (CB) edge of the film that was exposed to Zn atoms has been pressed towards the lower value, assembly it a better material for solar cells. EIS is particularly useful for understanding charge carrier transport, recombination mechanisms, and the influence of different interfaces within the device structure. J_sc is 11.09 mA cm⁻², V_oc is 1.09, PCE is 9.372% and FF is 0.777. The cell made with the 2% Zn doped into the MAPbI₂Br film demonstrated a superior device.