AlInGaN nanocrystal seeded growth of weak p-type β-(In0.1Ga0.9)2O3 nanowires and nanobelts

Abstract

The controlled growth of single-crystalline (In_xGa_1−x)₂O₃-based materials with high indium content is still a big challenge due to the large solid-phase miscibility gap, unclear growth mechanism, and the lack of seed epitaxial layers with appropriate lattice structures. In this study, Al_0.2In_0.2Ga_0.6N seed nanocrystals self-organized around Pt catalysts are employed as a seed epitaxial layer to grow single-crystalline β-(In_0.1Ga_0.9)₂O₃ nanowires and nanobelts. The growth mechanisms of single-crystalline β-(In_0.1Ga_0.9)₂O₃ nanowires and nanobelts are clarified by X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy. The epitaxial relationship of (01) β-(In_0.1Ga_0.9)₂O₃ on (0001) Al_0.2In_0.2Ga_0.6N is demonstrated according to XRD and TEM observations. Weak p-type properties are observed in β-(In_xGa_1−x)₂O₃ nanowires and nanobelts, attributed to the presence of an acceptor level from Ga vacancies, N impurities, and V_Ga–N_O complexes.