Issue 47, 2022

Effects of sub-picosecond direct laser interference patterning on the optoelectronic properties of fluorine-doped tin oxide thin films

Abstract

Micropatterning of metal oxides is of high interest for structuring electrodes in optoelectronic devices. In this work, the impact of infrared (IR) sub-picosecond Direct Laser Interference Patterning (DLIP) on the surface morphology, surface chemistry, optical and electrical properties of Fluorine-doped Tin Oxide (FTO) is studied. The topography characterization reveals periodic microchannels with an average height between 15 and 600 nm, depending on the applied laser fluence, decorated with Laser-Induced Periodic Surface Structures (LIPSS). The doping by aliovalent Sn atoms induced by non-linear IR absorption were revealed by X-ray Photoemission Spectroscopy (XPS) analysis. An increase in the average diffuse optical transmittance up to 730% was obtained in the spectral range 400–1000 nm as a consequence of the interaction of white light with the periodic micro- and nanostructures. The one-dimensionality of the microstructures caused a significant anisotropic electrical behavior, and an enhancement of the conductivity of up to 50% was obtained following the direction of the microchannels of the patterned films as compared to the unstructured material. Our results demonstrate that DLIP is a powerful technique for future application in structuring electrodes for highly efficient optoelectronic devices and sensors.

Graphical abstract: Effects of sub-picosecond direct laser interference patterning on the optoelectronic properties of fluorine-doped tin oxide thin films

Article information

Article type
Paper
Submitted
30 Sep 2022
Accepted
04 Nov 2022
First published
07 Nov 2022

J. Mater. Chem. C, 2022,10, 17954-17964

Effects of sub-picosecond direct laser interference patterning on the optoelectronic properties of fluorine-doped tin oxide thin films

H. Heffner, M. Soldera, F. Schell, M. Deconinck, Y. Vaynzof, L. Mulko and A. F. Lasagni, J. Mater. Chem. C, 2022, 10, 17954 DOI: 10.1039/D2TC04155C

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