Issue 22, 2022

(BixSb1−x)2Se3 thin films for short wavelength infrared region solar cells

Abstract

The short-wavelength infrared region of the solar spectrum remains largely untapped. The development of small band gap (0.7–1.1 eV) photovoltaic devices that will complement existing photovoltaic devices can potentially add 6% power conversion efficiency points. Bismuth-alloyed antimony selenide [(BixSb1−x)2Se3] is a potentially suitable light absorber with a tunable band gap in the relevant range. This paper reports a procedure for depositing Bi-alloyed Sb2Se3 thin films through close-spaced sublimation (CSS). Continuous thin films with various Bi concentrations and alloying up to 30 at% of Bi into Sb2Se3 [Bi/(Bi + Sb) = 0.30] were prepared. The composition, structure, and optical properties of the (BixSb1−x)2Se3 thin films were characterized. A decrease in the optical band gap from 1.17 eV to 0.99 eV has been observed by Bi-alloying (x = 0.30). A three-times decrease in grain size from ∼270 nm (for x = 0.0) to ∼100 nm (for x > 0.11) has been observed. The (BixSb1−x)2Se3 thin films were tested in an FTO/ZnO/CdS/(BixSb1−x)2Se3/Au solar cell structure to find their applicability in photovoltaic devices.

Graphical abstract: (BixSb1−x)2Se3 thin films for short wavelength infrared region solar cells

Supplementary files

Article information

Article type
Paper
Submitted
31 Mar 2022
Accepted
05 May 2022
First published
05 May 2022

J. Mater. Chem. C, 2022,10, 8702-8710

(BixSb1−x)2Se3 thin films for short wavelength infrared region solar cells

J. Kumar, Y. Dror and E. Edri, J. Mater. Chem. C, 2022, 10, 8702 DOI: 10.1039/D2TC01300B

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