Issue 20, 2022

Recent advances of substitutionally doped tin dichalcogenides

Abstract

Layered two-dimensional (2D) tin dichalcogenides (SnS2 and SnSe2) have attracted considerable attention owing to their environmental friendliness, semiconducting character, and outstanding electrical and optoelectronic properties. The electronic properties of 2D tin dichalcogenides can be effectively tuned by substitutional doping to improve their performance and extend their applications. Here, we review the recent advances in metal and non-metal substitutional doping of tin dichalcogenides and the effect of doping on electrical, optoelectronic, and thermoelectric applications. Moreover, the challenges and outlook of substitutional doping of tin dichalcogenides are also discussed.

Graphical abstract: Recent advances of substitutionally doped tin dichalcogenides

Article information

Article type
Review Article
Submitted
14 Mar 2022
Accepted
01 May 2022
First published
09 May 2022

J. Mater. Chem. C, 2022,10, 7771-7782

Recent advances of substitutionally doped tin dichalcogenides

H. Zhang, Z. Zhang, Q. Zhan, D. Liu, P. Zhao and Y. Cheng, J. Mater. Chem. C, 2022, 10, 7771 DOI: 10.1039/D2TC01034H

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