Issue 32, 2021

Silicon-based two-dimensional chalcogenide of p-type semiconducting silicon telluride nanosheets for ultrahigh sensitive photodetector applications

Abstract

Two-dimensional (2D) materials have attracted significant attention in recent years owing to their exotic properties. Semiconducting p-type 2D crystals are crucial to the construction of versatile p–n junction-based nanoelectronic devices, and promising future optoelectronic applications. Herein, we reported the growth of high-quality p-type silicon telluride (Si2Te3) single crystals using the chemical vapor transport (CVT) technique. Few layered Si2Te3 nanosheets were obtained by mechanical exfoliation and used to fabricate a phototransistor device under a rigid silicon substrate. The Si2Te3 nanosheet-based transistor exhibits an outstanding device performance, such as a high photoresponsivity of approximately 1396 A W−1 and a larger specific detectivity of approximately 2.52 × 1012 Jones at a wavelength of 633 nm. The values obtained using the Si2Te3 single crystal are remarkably superior to those obtained for the other chalcogenide 2D crystals, such as Bi2Te3 and Sb2Te3. In addition, the normalized gain value of approximately 2.74 × 10−4 V−1 cm2 achieved using this field-effect transistor (FET) device is several orders higher than those of the other 2D single crystal-based FET devices. Our results suggest that the Si2Te3 single crystal could be a benchmark candidate for the integration of prospective p–n junction circuits and photo-sensing applications.

Graphical abstract: Silicon-based two-dimensional chalcogenide of p-type semiconducting silicon telluride nanosheets for ultrahigh sensitive photodetector applications

Supplementary files

Article information

Article type
Paper
Submitted
08 May 2021
Accepted
15 Jul 2021
First published
23 Jul 2021

J. Mater. Chem. C, 2021,9, 10478-10486

Silicon-based two-dimensional chalcogenide of p-type semiconducting silicon telluride nanosheets for ultrahigh sensitive photodetector applications

C. Lin, R. K. Ulaganathan, R. Sankar, R. C. Murugesan, A. Subramanian, A. Rozhin and S. Firdoz, J. Mater. Chem. C, 2021, 9, 10478 DOI: 10.1039/D1TC02129J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements