Tuning the exposure of BiVO4-{010} facets to enhance the N2 photofixation performance

Abstract

Effective separation of photoexcited carriers and chemisorption of the N₂ molecule are two key issues to efficient nitrogen photofixation. The spatial charge separation of BiVO₄ with anisotropic exposed facets, namely the transfer of photoexcited electrons and holes to {010} and {110} facets, respectively, helps to enhance the separation ability of photogenerated carriers. Theoretical calculation results predict that a surface oxygen vacancy is easier to form on the (010) facet than on the (110) facet of BiVO₄. Accordingly, in this study, enhanced N₂ photofixation performance has been achieved for the first time by tuning the exposure of {010} facets of BiVO₄.