Oxygen vacancies on the surface of HxWO3−y for enhanced charge storage

Haiyan Wang; Ruxue Fan; Jingyu Miao; Jiayi Chen; Shanjun Mao; Jiang Deng; Yong Wang

doi:10.1039/C8TA00981C

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Oxygen vacancies on the surface of H_xWO_3−y for enhanced charge storage†

Haiyan Wang,^a Ruxue Fan,^a Jingyu Miao,^a Jiayi Chen,^a Shanjun Mao,^a Jiang Deng^a and Yong Wang

*^a

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* Corresponding authors

^a Advanced Materials and Catalysis Group, Institute of Catalysis, Zhejiang University, Hangzhou 310028, P. R. China
E-mail: chemwy@zju.edu.cn

Abstract

The dominant role of surface oxygen vacancies (OVs) in improving energy storage is underscored by comparing the OV-mediated charge storage performance of surface and bulk defective H_xWO_3−y with that of WO₃ and bulk defective e-H_xWO_3−y. It shows that surface OVs are key hot spots for faradaic reactions in H_xWO_3−y, which promotes the formation of certain W⁵⁺ and W⁴⁺ during the reduction process.

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Article information

DOI: https://doi.org/10.1039/C8TA00981C
Article type: Communication
Submitted: 30 Jan 2018
Accepted: 21 Mar 2018
First published: 21 Mar 2018

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J. Mater. Chem. A, 2018,6, 6780-6784

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Oxygen vacancies on the surface of H_xWO_3−y for enhanced charge storage

H. Wang, R. Fan, J. Miao, J. Chen, S. Mao, J. Deng and Y. Wang, J. Mater. Chem. A, 2018, 6, 6780 DOI: 10.1039/C8TA00981C

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Journal of Materials Chemistry A