Jump to main content
Jump to site search

Issue 17, 2018, Issue in Progress
Previous Article Next Article

Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

Author affiliations

Abstract

A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

Graphical abstract: Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

Back to tab navigation

Supplementary files

Publication details

The article was received on 20 Oct 2017, accepted on 23 Feb 2018 and first published on 28 Feb 2018


Article type: Paper
DOI: 10.1039/C7RA11601B
Citation: RSC Adv., 2018,8, 9031-9037
  • Open access: Creative Commons BY-NC license
  •   Request permissions

    Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    N. Lim, T. J. Yoo, J. T. Kim, Y. Pak, Y. Kumaresan, H. Kim, W. Kim, B. H. Lee and G. Y. Jung, RSC Adv., 2018, 8, 9031
    DOI: 10.1039/C7RA11601B

    This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material and it is not used for commercial purposes.

    Reproduced material should be attributed as follows:

    • For reproduction of material from NJC:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the Centre National de la Recherche Scientifique (CNRS) and the RSC.
    • For reproduction of material from PCCP:
      [Original citation] - Published by the PCCP Owner Societies.
    • For reproduction of material from PPS:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
    • For reproduction of material from all other RSC journals:
      [Original citation] - Published by The Royal Society of Chemistry.

    Information about reproducing material from RSC articles with different licences is available on our Permission Requests page.

Search articles by author

Spotlight

Advertisements