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Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States

Abstract

Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet been reported with similar properties, despite the fact that reduced dimensions should help diminishing the contributions from bulk carriers. Here we demonstrate that Bi2Se3 nanoribbons, grown by a simple catalyst-free physical-vapour deposition, have inherently low bulk carrier densities, and can be further made bulk-free by thickness reduction, thus revealing the high mobility topological surface states. Magneto transport and Hall conductance measurements, in single nanoribbons, show that at thicknesses below 30 nm the bulk transport is completely suppressed which is supported by self-consistent band-bending calculations. The results highlight the importance of material growth and geometrical confinement to properly exploit the unique properties of the topological surface states.

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Publication details

The article was received on 08 Jul 2018, accepted on 13 Sep 2018 and first published on 13 Sep 2018


Article type: Paper
DOI: 10.1039/C8NR05500A
Citation: Nanoscale, 2018, Accepted Manuscript
  • Open access: Creative Commons BY-NC license
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    Bulk-Free Topological Insulator Bi2Se3 nanoribbons with Magnetotransport Signatures of Dirac Surface States

    G. Kunakova, L. Galletti, S. Charpentier, J. Andzane, D. Erts, F. Léonard, C. D. Spataru, T. Bauch and F. Lombardi, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR05500A

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