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Issue 35, 2018
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Ultrahigh-photoresponsive UV photodetector based on a BP/ReS2 heterostructure p–n diode

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Abstract

The van der Waals (vdW) heterostructure, made up of two dissimilar two-dimensional materials held together by van der Waals interactions, has excellent electronic and optoelectronic properties as it provides a superior interface quality without the lattice mismatch problem. Here, we report the development and photoresponse characteristics of a p–n diode based on a stacked black phosphorus (BP) and rhenium disulfide (ReS2) heterojunction. The heterojunction showed a clear gate-tunable rectifying behavior similar to that of the conventional p–n junction diode. Under UV illumination, the BP/ReS2 p–n diode displayed a high photoresponsivity of 4120 A W−1 and we were able to modify the photoresponse properties by adjusting the back gate voltage. Moreover, an investigation of various channel lengths yielded the highest photoresponsivity of 11 811 A W−1 for a BP length of 1 μm. These results suggested vdW 2D materials to be promising for developing advanced heterojunction devices for nano-optoelectronics.

Graphical abstract: Ultrahigh-photoresponsive UV photodetector based on a BP/ReS2 heterostructure p–n diode

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Publication details

The article was received on 01 Jul 2018, accepted on 15 Aug 2018 and first published on 16 Aug 2018


Article type: Paper
DOI: 10.1039/C8NR05291C
Citation: Nanoscale, 2018,10, 16805-16811
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    Ultrahigh-photoresponsive UV photodetector based on a BP/ReS2 heterostructure p–n diode

    S. Cao, Y. Xing, J. Han, X. Luo, W. Lv, W. Lv, B. Zhang and Z. Zeng, Nanoscale, 2018, 10, 16805
    DOI: 10.1039/C8NR05291C

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