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Issue 31, 2018
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High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression

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Abstract

Mobility engineering is one of the most important challenges that determine the optoelectronic performance of two-dimensional (2D) materials. So far, charged-impurity scattering and electrical-contact barriers have been suppressed through high-κ dielectrics and seamless contact engineering, giving rise to carrier-mobility improvement in exfoliated 2D semiconducting MoS2. Here we demonstrate a facile and scalable technique to effectively suppress both Coulomb scattering and electron–phonon scattering via the HfO2 overlayer, resulting in a large mobility improvement in CVD-grown monolayer MoS2, in excess of 60 cm2 V−1 s−1. Surface passivation and suppression of Coulomb scattering can partially contribute to the mobility increase. Interestingly, we correlate the mobility increase with phonon quenching through Raman and temperature-dependent mobility measurements. The experimental method is facile, industrially scalable, and renders phonon engineering an additional leverage towards further improvements in 2D semiconductor mobility and device performance.

Graphical abstract: High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression

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Publication details

The article was received on 31 May 2018, accepted on 23 Jul 2018 and first published on 24 Jul 2018


Article type: Paper
DOI: 10.1039/C8NR04416C
Citation: Nanoscale, 2018,10, 15071-15077
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    High carrier mobility in monolayer CVD-grown MoS2 through phonon suppression

    N. Huo, Y. Yang, Y. Wu, X. Zhang, S. T. Pantelides and G. Konstantatos, Nanoscale, 2018, 10, 15071
    DOI: 10.1039/C8NR04416C

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