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Issue 31, 2018
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Large-scale transfer-free growth of thin graphite films at low temperature for solid diffusion barriers

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Abstract

Amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) have been under intense investigation as one of the promising candidates for active matrix flat-panel displays. However, solid diffusion of a-IGZO to other layers during TFT device fabrication highly degrades their electrical and optical properties. It is expected that the diffusion-impenetrable properties of graphitic materials can be utilized as diffusion barriers. A conventional transfer method and direct growth on TFTs with high temperature are limited due to wet transfer conditions and low Tg (∼540 °C) of the glass substrates, respectively. Here we report the large-scale transfer-free growth of thin graphite films at low temperature (∼350 °C) for solid diffusion barriers in the a-IGZO TFTs using plasma enhanced chemical vapor deposition (PECVD), which can be widely used to protect solid-diffusion for sustainable and scalable future industrial technology.

Graphical abstract: Large-scale transfer-free growth of thin graphite films at low temperature for solid diffusion barriers

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Publication details

The article was received on 12 May 2018, accepted on 16 Jul 2018 and first published on 20 Jul 2018


Article type: Communication
DOI: 10.1039/C8NR03842B
Citation: Nanoscale, 2018,10, 14819-14823
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    Large-scale transfer-free growth of thin graphite films at low temperature for solid diffusion barriers

    S. H. Kang, S. Kang, S. C. Park, J. B. Park, Y. Jung and B. H. Hong, Nanoscale, 2018, 10, 14819
    DOI: 10.1039/C8NR03842B

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