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Enhancing Electronic and Optoelectronic Performance of Tungsten Diselenide by Plasma Treatment


Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhancing the electronic and optoelectronic performance of WSe2-based devices by N2O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm2v-1s-1 and 2.2×1012 cm-2 respectively after the treatment. At the same time, the contact resistance (Rc) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.1 GΩ∙μm to 28.4 kΩ∙μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5×105 A/W), short response time (< 2 ms), high detectivity (3.6×1013 Jones) and very large photoconductive gain (> 106). We have also built a lateral p-n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 106, excellent photoresponsivity of 2.49 A/W and fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials.

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Publication details

The article was received on 02 Apr 2018, accepted on 08 Jun 2018 and first published on 12 Jun 2018

Article type: Paper
DOI: 10.1039/C8NR02668H
Citation: Nanoscale, 2018, Accepted Manuscript
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    Enhancing Electronic and Optoelectronic Performance of Tungsten Diselenide by Plasma Treatment

    Y. xie, E. wu, R. Hu, S. Qian, Z. Feng, X. J. Chen, H. Zhang, L. Xu, X. Hu, J. Liu and D. zhang, Nanoscale, 2018, Accepted Manuscript , DOI: 10.1039/C8NR02668H

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