Jump to main content
Jump to site search


Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

Author affiliations

Abstract

p-Type doping in wide bandgap and new classes of ultra-wide bandgap materials has long been a scientific and engineering problem. The challenges arise from the large activation energy of dopants and high densities of dislocations in materials. We report here, a significantly enhanced p-type conduction using high-quality AlGaN nanowires. For the first time, the hole concentration in Mg-doped AlGaN nanowires is quantified. The incorporation of Mg into AlGaN was verified by correlation with photoluminescence and Raman measurements. The open-circuit potential measurements further confirmed the p-type conductivity, while Mott–Schottky experiments measured a hole concentration of 1.3 × 1019 cm−3. These results from photoelectrochemical measurements allow us to design prototype ultraviolet (UV) light-emitting diodes (LEDs) incorporating the AlGaN quantum-disks-in-nanowire and an optimized p-type AlGaN contact layer for UV-transparency. The ∼335 nm LEDs exhibited a low turn-on voltage of 5 V with a series resistance of 32 Ω, due to the efficient p-type doping of the AlGaN nanowires. The bias-dependent Raman measurements further revealed the negligible self-heating of devices. This study provides an attractive solution to evaluate the electrical properties of AlGaN, which is applicable to other wide bandgap nanostructures. Our results are expected to open doors to new applications for wide and ultra-wide bandgap materials.

Graphical abstract: Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

Back to tab navigation

Supplementary files

Publication details

The article was received on 31 Mar 2018, accepted on 18 May 2018 and first published on 29 May 2018


Article type: Paper
DOI: 10.1039/C8NR02615G
Citation: Nanoscale, 2018, Advance Article
  • Open access: Creative Commons BY-NC license
  •   Request permissions

    Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

    C. Zhao, M. Ebaid, H. Zhang, D. Priante, B. Janjua, D. Zhang, N. Wei, A. A. Alhamoud, M. K. Shakfa, T. K. Ng and B. S. Ooi, Nanoscale, 2018, Advance Article , DOI: 10.1039/C8NR02615G

    This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material and it is not used for commercial purposes.

    Reproduced material should be attributed as follows:

    • For reproduction of material from NJC:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the Centre National de la Recherche Scientifique (CNRS) and the RSC.
    • For reproduction of material from PCCP:
      [Original citation] - Published by the PCCP Owner Societies.
    • For reproduction of material from PPS:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
    • For reproduction of material from all other RSC journals:
      [Original citation] - Published by The Royal Society of Chemistry.

    Information about reproducing material from RSC articles with different licences is available on our Permission Requests page.

Search articles by author

Spotlight

Advertisements