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Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors

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Abstract

Near infrared light (NIR) photodetectors based on one-dimensional semiconductor nanowires have generated considerable interest due to their practical application in versatile fields. We present a facile yet efficient approach to rationally integrating KCu7S4 semiconductor nanowires by the Langmuir–Blodgett (LB) technique. A self-powered near infrared (NIR) light photodetector is fabricated by transferring a close-packed KCu7S4 nanowire monolayer to the surface of a silicon wafer. The as-fabricated Si/KCu7S4 heterojunction with a close-packed and well-aligned nanowire array exhibits splendid photovoltaic performance when illuminated by NIR light, allowing the detection of NIR light without an exterior power supply. The photodetector exhibits a high sensitivity to NIR light (980 nm, 295.3 μW cm−2) with responsivity (R) 15 mA W−1 and detectivity (D*) 2.15 × 1012 cm Hz1/2 W−1. Significantly, the device shows the capability to work under high pulsed light irradiation up to 50 kHz with a high-speed response (response time τr 7.4 μs and recovery time τf 8.6 μs). This facilitates the fabrication of low-cost and high-speed photodetectors and integrated optoelectronic sensor circuitry.

Graphical abstract: Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors

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Publication details

The article was received on 23 Feb 2018, accepted on 01 Jun 2018 and first published on 04 Jun 2018


Article type: Paper
DOI: 10.1039/C8NR01553H
Citation: Nanoscale, 2018, Advance Article
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    Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors

    Y. Wang, Y. Wu, W. Peng, Y. Song, B. Wang, C. Wu and Y. Lu, Nanoscale, 2018, Advance Article , DOI: 10.1039/C8NR01553H

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