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Issue 19, 2018
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Lanthanide Yb/Er co-doped semiconductor layered WSe2 nanosheets with near-infrared luminescence at telecommunication wavelengths

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Abstract

Atomically thin layers of transition metal dichalcogenides (TMDs) have recently drawn great attention. However, doping strategies and controlled synthesis for wafer-scale TMDs are still in their early stages, greatly hindering the construction of devices and further basic studies. In this work, we develop the fast deposition of wafer-scale layered lanthanide ion Yb/Er co-doped WSe2 using pulsed laser deposition. WSe2 nanosheets were chosen as the host, while Yb3+ and Er3+ ions served as the sensitizer and activator, respectively. The obtained Yb/Er co-doped WSe2 layers exhibit good uniformity and high crystallinity with highly textured features. Under the excitation of a diode laser at 980 nm, down-conversion emission is observed at around 1540 nm, assigned to the emission transition between the 4I13/2 and 4I15/2 states of Er3+. Considering the significance of 1540 nm luminescence in the application of photonic technologies, this observation in the WSe2:Yb/Er nanosheets down to the monolayer provides a new opportunity for developing photonic devices at the 2D limit. Our work not only offers a general method to prepare wafer-scale lanthanide doped TMDs, but also to widely modulate the luminescence of atomically layered TMDs by introducing lanthanide ions.

Graphical abstract: Lanthanide Yb/Er co-doped semiconductor layered WSe2 nanosheets with near-infrared luminescence at telecommunication wavelengths

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Publication details

The article was received on 07 Feb 2018, accepted on 24 Apr 2018 and first published on 25 Apr 2018


Article type: Paper
DOI: 10.1039/C8NR01139G
Citation: Nanoscale, 2018,10, 9261-9267
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    Lanthanide Yb/Er co-doped semiconductor layered WSe2 nanosheets with near-infrared luminescence at telecommunication wavelengths

    G. Bai, Z. Yang, H. Lin, W. Jie and J. Hao, Nanoscale, 2018, 10, 9261
    DOI: 10.1039/C8NR01139G

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