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The interplay between structure and function in redox-based resistance switching

Abstract

We report a study of the relationship between oxide microstructure at the scale of tens of nanometres and resistance switching behaviour in silicon oxide. In the case of sputtered amorphous oxides, the presence of columnar structure enables efficient resistance switching by providing an intial structured distribution of defects that can act as precursors for the formation of chains of conductive oxygen vacancies under the application of appropriate electrical bias. Increasing electrode interface roughness decreases electroforming voltages and reduces the distribution of switching voltages. Any contribution to these effects from field enhancement at rough interfaces is secondary to changes in oxide microstructure templated by interface structure.

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Publication details

The article was received on 11 Jun 2018, accepted on 03 Jul 2018 and first published on 03 Jul 2018


Article type: Paper
DOI: 10.1039/C8FD00118A
Citation: Faraday Discuss., 2018, Accepted Manuscript
  • Open access: Creative Commons BY license
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    The interplay between structure and function in redox-based resistance switching

    A. Kenyon, W. H. Ng, M. Singh Munde, M. Buckwell, D. Joksas and A. Mehonic, Faraday Discuss., 2018, Accepted Manuscript , DOI: 10.1039/C8FD00118A

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