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Issue 19, 2018
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Two-step electrodeposition to fabricate the p–n heterojunction of a Cu2O/BiVO4 photoanode for the enhancement of photoelectrochemical water splitting

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Abstract

A Cu2O/BiVO4 p–n heterojunction based photoanode in photoelectrochemical (PEC) water splitting is fabricated by a two-step electrodeposition method on an FTO substrate followed by annealing treatment. The structures and properties of the samples are characterized by XRD, FESEM, HRTEM, XPS and UV-visible spectra. The photoelectrochemical activity of the photoanode in water oxidation has been investigated and measured in a three electrode quartz cell system; the obtained maximum photocurrent density of 1.72 mA cm−2 at 1.23 V vs. RHE is 4.5 times higher than that of pristine BiVO4 thin films (∼0.38 mA cm−2). The heterojunction based photoanode also exhibits a tremendous cathodic shift of the onset potential (∼420 mV) and enhancement in the IPCE value by more than 4-fold. The enhanced photoelectrochemical properties of the Cu2O/BiVO4 photoelectrode are attributed to the efficient separation of the photoexcited electron–hole pairs caused by the inner electronic field (IEF) of the p–n heterojunction.

Graphical abstract: Two-step electrodeposition to fabricate the p–n heterojunction of a Cu2O/BiVO4 photoanode for the enhancement of photoelectrochemical water splitting

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Publication details

The article was received on 11 Nov 2017, accepted on 05 Apr 2018 and first published on 17 Apr 2018


Article type: Paper
DOI: 10.1039/C7DT04258B
Citation: Dalton Trans., 2018,47, 6763-6771
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    Two-step electrodeposition to fabricate the p–n heterojunction of a Cu2O/BiVO4 photoanode for the enhancement of photoelectrochemical water splitting

    S. Bai, J. Liu, M. Cui, R. Luo, J. He and A. Chen, Dalton Trans., 2018, 47, 6763
    DOI: 10.1039/C7DT04258B

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