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Issue 16, 2018
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Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics

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Abstract

Among two dimensional (2D) van der Waals (vdW) layered materials such as graphene, which is used like a metal, and transition metal chalcogenides (TMdCs), which are used as semiconductors and metals, hexagonal boron nitride (hBN), which is used as an insulator, is ubiquitous as a building block to construct 2D vdW electronics for versatile tunneling devices. Monolayer and few-layer hBN films have been prepared with flake sizes of a few hundred micrometer via mechanical exfoliation and transfer methods. Another approach used to synthesize hBN films on a large scale is chemical vapor deposition (CVD). Although the single-crystal film growth of hBN on the wafer scale is the key to realizing realistic electronic applications, the various functionalities of hBN for 2D electronics are mostly limited to the microscale. Here, we review the recent progress for the large-area synthesis of hBN and other related vdW heterostructures via CVD, and the artificial construction of vdW heterostructures and 2D vdW electronics based on hBN, in terms of charge fluctuations, passivation, gate dielectrics, tunneling, Coulombic interactions, and contact resistances. The challenges and future perspectives for practical applications are also addressed.

Graphical abstract: Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics

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Publication details

The article was received on 30 May 2018 and first published on 25 Jul 2018


Article type: Review Article
DOI: 10.1039/C8CS00450A
Citation: Chem. Soc. Rev., 2018,47, 6342-6369
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    Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics

    K. K. Kim, H. S. Lee and Y. H. Lee, Chem. Soc. Rev., 2018, 47, 6342
    DOI: 10.1039/C8CS00450A

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