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Issue 9, 2018
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Atomically thin p–n junctions based on two-dimensional materials

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Abstract

Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p–n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p–n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p–n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p–n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p–n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p–n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field.

Graphical abstract: Atomically thin p–n junctions based on two-dimensional materials

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Publication details

The article was received on 18 Dec 2017 and first published on 23 Apr 2018


Article type: Review Article
DOI: 10.1039/C7CS00880E
Citation: Chem. Soc. Rev., 2018,47, 3339-3358
  • Open access: Creative Commons BY-NC license
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    Atomically thin p–n junctions based on two-dimensional materials

    R. Frisenda, A. J. Molina-Mendoza, T. Mueller, A. Castellanos-Gomez and H. S. J. van der Zant, Chem. Soc. Rev., 2018, 47, 3339
    DOI: 10.1039/C7CS00880E

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