Jump to main content
Jump to site search


Overwhelming coexistence of negative differential resistance effect and RRAM

Abstract

An electronic cell that holds synchronously multi-physical properties is of great important in the applications of multifunctional electronic devices. In this work, an overwhelming coexistence of negative differential resistance (NDR) effect and resistive switching (RS) memory behavior at room temperature is observed based on Ag/Cu2ZnSnSe4 (CZTSe)/Mo device. The long retention time of ~104 s and high HRS/LRS resistance ratio of ~215 can be reached, indicating our devices hold excellent resistance random access memory (RRAM) application. Moreover, the strong NDR behavior was found at room temperature and provide a great potential application in advanced electronic device. Finally, the combined physical model of conductive filament and Schottky barrier reinstallment is demonstrated to explain the coexistence phenomenon. This work break through a new way for preparing a multifunctional electronic device with multiple physical attributes in the future.

Back to tab navigation

Supplementary files

Publication details

The article was received on 02 Jun 2018, accepted on 13 Jul 2018 and first published on 14 Jul 2018


Article type: Paper
DOI: 10.1039/C8CP03492C
Citation: Phys. Chem. Chem. Phys., 2018, Accepted Manuscript
  •   Request permissions

    Overwhelming coexistence of negative differential resistance effect and RRAM

    T. Guo, B. Sun, Y. Zhou, H. B. Zhao, M. Lei and Y. Zhao, Phys. Chem. Chem. Phys., 2018, Accepted Manuscript , DOI: 10.1039/C8CP03492C

Search articles by author

Spotlight

Advertisements