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Issue 19, 2018
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Quantum spin Hall insulator BiXH (XH = OH, SH) monolayers with a large bulk band gap

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Abstract

A large bulk band gap is critical for the application of two-dimensional topological insulators (TIs) in spintronic devices operating at room temperature. On the basis of first-principles calculations, we predict BiXH (X = OH, SH) monolayers as TIs with an extraordinarily large bulk gap of 820 meV for BiOH and 850 meV for BiSH, and propose a tight-binding model considering spin–orbit coupling to describe the electronic properties of BiXH. These large gaps are entirely due to the strong spin–orbit interaction related to the pxy orbitals of the Bi atoms of the honeycomb lattice. The orbital filtering mechanism can be used to understand the topological properties of BiXH. The XH groups simply remove one branch of orbitals (pz of Bi) and reduce the trivial 6-band lattice into a 4-band, which is topologically non-trivial. The topological characteristics of BiXH monolayers are confirmed by nonzero topological invariant Z2 and a single pair of gapless helical edge states in the bulk gap. Owing to these features, the BiXH monolayers of the large-gap TIs are an ideal platform to realize many exotic phenomena and fabricate new quantum devices working at room temperature.

Graphical abstract: Quantum spin Hall insulator BiXH (XH = OH, SH) monolayers with a large bulk band gap

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Publication details

The article was received on 22 Mar 2018, accepted on 19 Apr 2018 and first published on 20 Apr 2018


Article type: Paper
DOI: 10.1039/C8CP01867G
Citation: Phys. Chem. Chem. Phys., 2018,20, 13632-13636
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    Quantum spin Hall insulator BiXH (XH = OH, SH) monolayers with a large bulk band gap

    X. Hu, J. Lyu, C. Zhang, P. Wang, W. Ji and P. Li, Phys. Chem. Chem. Phys., 2018, 20, 13632
    DOI: 10.1039/C8CP01867G

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