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Issue 19, 2018
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Unconventional strain-dependent conductance oscillations in pristine phosphorene

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Abstract

Phosphorene is a single elemental, two-dimensional semiconductor that has quickly emerged as a high mobility material for transistors and optoelectronic devices. In addition, being a 2D material it can sustain high levels of strain, enabling sensitive modification of its electronic properties. In this paper, we investigate the strain dependent electronic properties of phosphorene nanocrystals. By performing extensive calculations we determine the electrical conductance as a function of uniaxial, as well as biaxial strain stimuli and uncover a unique zone phase diagram. This enables us to uncover conductance oscillations in pristine phosphorene for the first time, by the simple application of strain. We show that such unconventional current–voltage behaviour is tuneable by the nature of strain, and that an additional gate voltage can modulate the amplitude (peak to valley ratio) of the observed phenomena and its switching efficiency. Furthermore, we show that the switching is highly robust against doping and defects. Our detailed results present new leads for innovation in strain based gauging and high-frequency nanoelectronic switches of phosphorene.

Graphical abstract: Unconventional strain-dependent conductance oscillations in pristine phosphorene

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Publication details

The article was received on 13 Mar 2018, accepted on 17 Apr 2018 and first published on 17 Apr 2018


Article type: Paper
DOI: 10.1039/C8CP01620H
Citation: Phys. Chem. Chem. Phys., 2018,20, 13508-13516
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    Unconventional strain-dependent conductance oscillations in pristine phosphorene

    S. J. Ray and M. V. Kamalakar, Phys. Chem. Chem. Phys., 2018, 20, 13508
    DOI: 10.1039/C8CP01620H

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