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Diverse resistive switching behaviors of AlN thin films with different orientations

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Abstract

Aluminum nitride (AlN) thin films with different orientations (i.e., amorphous, (100)- and (002)-oriented) are deposited on Pt/Ti/SiO2/Si substrates via the radio-frequency (RF) sputtering method. Among the three films, the amorphous AlN film is found to provide both the lowest leakage current (2.6 × 10−11 A) and the largest memory window size (3.1 × 106). Moreover, the observation results suggest that the thermal activation energy has a greater effect on the conduction behavior of the Ag/AlN/Pt structures than the microstructure, surface morphology, or chemical bonds.

Graphical abstract: Diverse resistive switching behaviors of AlN thin films with different orientations

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Publication details

The article was received on 12 Jun 2018, accepted on 17 Aug 2018 and first published on 10 Sep 2018


Article type: Paper
DOI: 10.1039/C8CE00966J
Citation: CrystEngComm, 2018, Advance Article
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    Diverse resistive switching behaviors of AlN thin films with different orientations

    C. Lin, H. Liou, S. Chu, C. Huang and C. Hong, CrystEngComm, 2018, Advance Article , DOI: 10.1039/C8CE00966J

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