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Effect of nitrogen-oxygen ratio on the position of N atoms in TiO2 lattice of N-doped TiO2 thin films prepared by DC magnetron sputtering

Abstract

The nitrogen-doped TiO2 thin films are deposited on the glass substrate by using a Direct-Current (DC) magnetron sputtering technique. The film properties are analyzed by X-ray diffraction (XRD), Atomic force microscopy (AFM), UV-Vis diffused reflectance spectroscopy (DRS) and photoluminescence (PL) measurements. The results show that under the same working pressure and other conditions, nitrogen doping promote the phase transition from anatase to rutile. Also, on the change of the nitrogen-oxygen ratio, nitrogen atoms enter the TiO2 lattice in different positions. When oxygen is abundant, nitrogen atoms will be present in the lattice in the interstitial positions, while oxygen is insufficient, nitrogen atoms enter the oxygen vacancies first, forming a substituted position. Finally, we find that with the increase in nitrogen-oxygen ratio, the sample has a better response in visible light, attributed to the change in the energy band-gap.

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Publication details

The article was received on 11 May 2018, accepted on 14 Jun 2018 and first published on 15 Jun 2018


Article type: Paper
DOI: 10.1039/C8CE00773J
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Effect of nitrogen-oxygen ratio on the position of N atoms in TiO2 lattice of N-doped TiO2 thin films prepared by DC magnetron sputtering

    W. Haihua, D. Yang, X. Zhu, G. Peng, H. Sun, W. Peihua, L. Jitao, X. He and F. Linjie, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE00773J

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