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Promoter free synthesis of monolayer MoS2 by chemical vapour deposition

Abstract

Molybdenum disulphide (MoS2), a graphene analogue, is emerging as an exciting material for future nanoelectronics due to their unique electronic transport properties. Here we report the large scale and homogeneous synthesis of high quality MoS2 monolayer directly onto SiO2 substrates by a facile seed promoter free chemical vapour deposition (CVD) process. Piranha treatment process favourably reduces the surface free energy of the substrate for the incoming growth species to nucleate, thus paving a way for controlled layered growth via Frank-van der Merve growth mode. A classical nucleation theory is explored to understand the layered and particle growth of MoS2 with and without Piranha treatment, respectively. Careful tracking of piranha treatment and sulphurization time, the coverage of MoS2 monolayer can be extended over centimeter scale with highly reproducible features. The electro-catalytic hydrogen evolution reaction (HER) using large scale MoS2 demonstrates an excellent HER property with turn on potential of 0.15V vs RHE and Tafel slope of 46mV/dec. Our results confirm that the piranha treatment was providing an ideal platform for the controlled growth of large scale monolayer MoS2 on dielectric and semiconductor substrates such as SiO2 and Si for device applications.

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Publication details

The article was received on 11 Apr 2018, accepted on 04 Jun 2018 and first published on 06 Jun 2018


Article type: Paper
DOI: 10.1039/C8CE00576A
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Promoter free synthesis of monolayer MoS2 by chemical vapour deposition

    P. Gnanasekar, D. Periyanagounder, A. Nallathambi, S. Subramani, M. P and J. Kulandaivel, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE00576A

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