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Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy

Abstract

In this report, we demonstrate that the use of GaN seeding layer prepared by the droplet epitaxy prior to the growth of epitaxial GaN on Si (111) can lead to the formation of oriented arrays of Y-shaped nanoislands (nanotripods) and nanowires and affects surface density of the nanostructures. From the transmission electron microscopy studies, it is shown that at least some of the seeding islands have cubic zinc-blende (ZB) GaN structure, and their {111}-facets act as the nucleation centers for further growth of GaN nanorods with wurtzite (WZ) structure. It is also demonstrated, that even if the Ga-droplets are deposited on silicon surface prior to the nitridation, silicon nitride interlayer between silicon and GaN will be inevitably formed in the further growth process. The density and the position of the seeding centers can be controlled with growth parameters variation during the droplet epitaxy, thus technique proposed and studied in this report can be used for preparation of site- and density controlled arrays of nanostructures.

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Publication details

The article was received on 05 Mar 2018, accepted on 04 May 2018 and first published on 04 May 2018


Article type: Paper
DOI: 10.1039/C8CE00348C
Citation: CrystEngComm, 2018, Accepted Manuscript
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    Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy

    V. V. Fedorov, A. D. Bolshakov, D. Kirilenko, A. M. Mozharov, A. Sitnikova, G. A. Sapunov, L. N. Dvoreckaia, I. V. Shtrom, G. Cirlin and I. Mukhin, CrystEngComm, 2018, Accepted Manuscript , DOI: 10.1039/C8CE00348C

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