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Issue 19, 2018
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The defect evolution in homoepitaxial AlN layers grown by high-temperature metal–organic chemical vapor deposition

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Abstract

AlN homoepitaxy is a promising way to obtain high-quality AlN and Al-rich AlGaN and thus deep ultraviolet devices. The defect evolution in homoepitaxial AlN grown by high-temperature metal–organic chemical vapor deposition on AlN/sapphire templates was studied here. The schematic defect evolution model was given and the driving force of the dislocation motion was analyzed. Experimental results revealed that the dislocation line deflection angles changed differently for different types of threading dislocation at the interface of the AlN/sapphire template and the epilayer. The interface stress was considered to be the driving force of dislocation motion. The driving force needed for the change of deflection angles followed the sequence of pure screw dislocation > mixed dislocation > pure edge dislocation. The defect density exhibited a strong relationship with the strain states, indicating that the control of interface stress was an effective way to control the quality of homoepitaxial AlN. These results can not only provide deeper understanding of the AlN homoepitaxy mechanism, but also offer a way to grow high-quality AlN.

Graphical abstract: The defect evolution in homoepitaxial AlN layers grown by high-temperature metal–organic chemical vapor deposition

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Publication details

The article was received on 23 Feb 2018, accepted on 11 Apr 2018 and first published on 11 Apr 2018


Article type: Paper
DOI: 10.1039/C8CE00287H
Citation: CrystEngComm, 2018,20, 2720-2728
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    The defect evolution in homoepitaxial AlN layers grown by high-temperature metal–organic chemical vapor deposition

    K. Jiang, X. Sun, J. Ben, Y. Jia, H. Liu, Y. Wang, Y. Wu, C. Kai and D. Li, CrystEngComm, 2018, 20, 2720
    DOI: 10.1039/C8CE00287H

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