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Issue 20, 2018
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Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates

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Abstract

The crystallinity of one n-GaN (Si-doped) and two p-GaN (Mg-doped) homoepitaxial thin films selectively grown on GaN substrates was evaluated by using synchrotron X-ray diffraction. A reflection-mode monochromatic X-ray topography image from the n-GaN homoepitaxial thin film shows a mesh-shape structure that is similar to that of the selective-growth GaN substrate. Moreover, transmission-mode white-beam X-ray topography images from the GaN substrate and the n-GaN homoepitaxial thin film show similar regular dot-shape diffraction patterns. This suggests that, following hydride vapor phase epitaxy, the structural characteristics of the selectively grown GaN substrates inherited from their corresponding foreign substrates (dot-patterned sapphire) were inherited by the subsequent n-GaN homoepitaxial thin film, although the crystal quality of the homoepitaxial thin film had been deteriorated. White-beam topography images from two p-GaN homoepitaxial thin films grown on the same GaN substrate wafer and cut from adjacent areas indicate that the p-GaN thin films were non-uniform.

Graphical abstract: Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates

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Publication details

The article was received on 11 Feb 2018, accepted on 23 Apr 2018 and first published on 03 May 2018


Article type: Paper
DOI: 10.1039/C8CE00229K
Citation: CrystEngComm, 2018,20, 2861-2867
  • Open access: Creative Commons BY-NC license
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    Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates

    Y. Lou, C. Song, Y. Chen, L. S. R. Kumara, N. Palina, O. Seo, S. Hiroi, K. Kajiwara, M. Hoshino, K. Uesugi, Y. Irokawa, T. Nabatame, Y. Koide and O. Sakata, CrystEngComm, 2018, 20, 2861
    DOI: 10.1039/C8CE00229K

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