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Issue 19, 2018
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Insights into the polymorphism of Bi2W2O9: single crystal growth and a complete survey of the variable-temperature thermal and dielectric properties

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Abstract

Bismuth layered Aurivillius oxides have attracted longstanding research interest due to their unique structural characteristics and outstanding performance in ferroelectric dielectrics. The complex phase evolution process as a function of temperature and pressure in this family also provides fascinating platforms for understanding the chemical origin of their versatility. Herein, high-quality single crystals of a bismuth layered Aurivillius oxide, Bi2W2O9, with dimensions up to 29 × 23 × 11 mm3 were successfully grown via the top-seeded solution growth (TSSG) method using a mixture of WO3 and Li2B4O7 as a flux. The material crystallizes in an unexpected centrosymmetric orthorhombic Pbcn (no. 60) space group with unit cell parameters a = 23.705(2), b = 5.4148(6), and c = 5.4345(6) Å. A complete survey of the anisotropic and variable-temperature thermal and dielectric properties was carried out with the aim of gaining detailed insights into their polymorphism evolution process. The results demonstrate that, with increasing temperature, the compound undergoes complicated phase transitions and, by analogy, signatures of the transitions are summarized and compared with those in Bi2WO6 and Bi2MoO6. The phase sequences and transition mechanisms of Bi2W2O9 are proposed by careful inspection and estimation.

Graphical abstract: Insights into the polymorphism of Bi2W2O9: single crystal growth and a complete survey of the variable-temperature thermal and dielectric properties

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Publication details

The article was received on 06 Feb 2018, accepted on 21 Mar 2018 and first published on 22 Mar 2018


Article type: Paper
DOI: 10.1039/C8CE00189H
Citation: CrystEngComm, 2018,20, 2669-2680
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    Insights into the polymorphism of Bi2W2O9: single crystal growth and a complete survey of the variable-temperature thermal and dielectric properties

    X. Tian, Z. Gao, F. Chen, Q. Wu, C. Li, W. Lu, Y. Sun and X. Tao, CrystEngComm, 2018, 20, 2669
    DOI: 10.1039/C8CE00189H

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