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Issue 12, 2018
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Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection

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Abstract

A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 μA/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.

Graphical abstract: Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection

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Publication details

The article was received on 06 Jan 2018, accepted on 31 Mar 2018 and first published on 09 Apr 2018


Article type: Paper
DOI: 10.1039/C8AN00032H
Citation: Analyst, 2018,143, 2784-2789
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    Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection

    X. Ding, S. Yang, B. Miao, L. Gu, Z. Gu, J. Zhang, B. Wu, H. Wang, D. Wu and J. Li, Analyst, 2018, 143, 2784
    DOI: 10.1039/C8AN00032H

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