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Issue 39, 2017
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Resistive switching in MoSe2/BaTiO3 hybrid structures

J. P. B. Silva,*ab  C. Almeida Marques,cd  J. Agostinho Moreirab  and  O. Conde*cd 
Author affiliations

* Corresponding authors

a Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal
E-mail: josesilva@fisica.uminho.pt

b IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, 4169-007 Porto, Portugal

c Departamento de Física, Faculdade de Ciências, Universidade de Lisboa, 1749-016 Lisboa, Portugal
E-mail: omconde@ciencias.ulisboa.pt

d CeFEMA – Center of Physics and Engineering of Advanced Materials, Universidade de Lisboa, 1749-016 Lisboa, Portugal

Abstract

Here we study the resistive switching (RS) effect that emerges when ferroelectric BaTiO3 (BTO) and few-layer MoSe2 are combined in a single structure. The C–V loops reveal the ferroelectric nature of both Al/Si/SiOx/BTO/Au and Al/Si/SiOx/MoSe2/BTO/Au structures and the high quality of the SiOx/MoSe2 interface in the Al/Si/SiOx/MoSe2/Au structure. Al/Si/SiOx/MoSe2/BTO/Au hybrid structures show electroforming free resistive switching that is explained on the basis of the modulation of the potential distribution at the MoSe2/BTO interface via ferroelectric polarization flipping. This structure shows promising resistive switching characteristics with a switching ratio of ≈102 and a stable memory window, which are highly required for memory applications.

Graphical abstract: Resistive switching in MoSe2/BaTiO3 hybrid structures

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Publication details

The article was received on 06 Jul 2017, accepted on 22 Sep 2017 and first published on 22 Sep 2017


Article type: Paper
DOI: 10.1039/C7TC03024J
Citation: J. Mater. Chem. C, 2017,5, 10353-10359
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    Resistive switching in MoSe2/BaTiO3 hybrid structures

    J. P. B. Silva, C. Almeida Marques, J. A. Moreira and O. Conde, J. Mater. Chem. C, 2017, 5, 10353
    DOI: 10.1039/C7TC03024J

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