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Issue 82, 2017
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Control of the intrinsic microstructure in AP-PECVD synthesised amorphous silica thin films

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Abstract

Amorphous single layered silica films deposited using industrially scalable roll-to-roll atmospheric pressure-plasma enhanced chemical vapor deposition were evaluated in terms of structure–performance relationships. Polarised attenuated total reflectance-Fourier transform infrared absorption spectroscopy and heavy water exposure to induce hydrogen–deuterium exchange revealed it was possible to control the film porosity simply by varying the precursor flux and plasma residence times. Denser silica network structures with fewer hydroxyl impurities, shorter Si–O bonds, decreased Si–O–Si bond angles and a greater magnitude of isolated pores were found in films deposited with decreased precursor flux and increased plasma residence times, and consequently exhibited significantly improved encapsulation performance.

Graphical abstract: Control of the intrinsic microstructure in AP-PECVD synthesised amorphous silica thin films

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Publication details

The article was received on 05 Oct 2017, accepted on 30 Oct 2017 and first published on 10 Nov 2017


Article type: Paper
DOI: 10.1039/C7RA10975J
Citation: RSC Adv., 2017,7, 52274-52282
  • Open access: Creative Commons BY-NC license
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    Control of the intrinsic microstructure in AP-PECVD synthesised amorphous silica thin films

    F. M. Elam, B. C. A. M. van der Velden-Schuermans, S. A. Starostin, M. C. M. van de Sanden and H. W. de Vries, RSC Adv., 2017, 7, 52274
    DOI: 10.1039/C7RA10975J

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