Issue 77, 2017

Surfactant-mediated self-assembly of nanocrystals to form hierarchically structured zeolite thin films with controlled crystal orientation

Abstract

We report on a scalable wet deposition to simultaneously manipulate the self-assembly and orientation of zeolite Linde Type A (LTA) nanocrystals. This process, referred to as surfactant-mediated self-assembly (SMSA), creates zeolite LTA thin films with long-range ordered cylindrical patterns, wherein {100} faces of the crystals are preferably oriented parallel to the support surface. This approach makes it possible to control the diameter as well as the depth of the cylindrical patterns in zeolite thin films fabricated via scalable wet deposition. To elucidate the mechanism underlying the SMSA process, we applied in situ imaging to cast solutions subjected to a temperature swing. Our results indicate that the cylindrical patterns may be developed from micelles of the surfactant, which make up a thermodynamic phase in the cast solution. We also demonstrate that the apparent dielectric constant and optical haze of the zeolite LTA thin films can be engineered by altering the dimensions of the cylindrical patterns.

Graphical abstract: Surfactant-mediated self-assembly of nanocrystals to form hierarchically structured zeolite thin films with controlled crystal orientation

Supplementary files

Article information

Article type
Paper
Submitted
27 Sep 2017
Accepted
10 Oct 2017
First published
18 Oct 2017
This article is Open Access
Creative Commons BY license

RSC Adv., 2017,7, 49048-49055

Surfactant-mediated self-assembly of nanocrystals to form hierarchically structured zeolite thin films with controlled crystal orientation

C. H. Lam, H. Chi, S. Hsu, Y. Li, W. Lee, I. Cheng and D. Kang, RSC Adv., 2017, 7, 49048 DOI: 10.1039/C7RA10679C

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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