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Issue 35, 2017, Issue in Progress
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An extended application of β-Ga2O3 single crystals to the laser field: Cr4+:β-Ga2O3 utilized as a new promising saturable absorber

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Abstract

Considering their easy growth and doping in bulk crystal growth, and good crystalline quality, β-Ga2O3 single crystals, a very important wide-bandgap semiconductor, are now also considered to be a promising optical crystal candidate. In this work, a Cr4+:β-Ga2O3 single crystal has been grown successfully by the edge-defined film-fed growth method. The thermal conductivity of Cr4+:β-Ga2O3 has been measured along the a* direction at room temperature obtaining 16.2 W m−1 K−1, and it was much larger than that of the usually used Cr4+-doped crystals, such as Y3Al5O12 (YAG) or YVO4. The Raman spectrum indicated that the cutoff phonon energy of the β-Ga2O3 crystal was 767.8 cm−1. A passively Q-switched nanosecond pulsed Nd:YAG laser based on a Cr4+:β-Ga2O3 saturable absorber was experimentally demonstrated for the first time to our knowledge and its mechanism is explained by first-principles calculations. By inserting the Cr4+:β-Ga2O3 crystal into the Nd:YAG laser cavity, a Q-switched laser operation was obtained with a maximum average output power of 50 mW. The corresponding pulse repetition rate, pulse width, and pulse energy were determined to be of 421.5 kHz, 235.2 ns and 0.12 μJ, respectively.

Graphical abstract: An extended application of β-Ga2O3 single crystals to the laser field: Cr4+:β-Ga2O3 utilized as a new promising saturable absorber

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Publication details

The article was received on 15 Feb 2017, accepted on 06 Apr 2017 and first published on 19 Apr 2017


Article type: Paper
DOI: 10.1039/C7RA01905J
Citation: RSC Adv., 2017,7, 21815-21819
  • Open access: Creative Commons BY license
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    An extended application of β-Ga2O3 single crystals to the laser field: Cr4+:β-Ga2O3 utilized as a new promising saturable absorber

    W. Mu, Y. Yin, Z. Jia, L. Wang, J. Sun, M. Wang, C. Tang, Q. Hu, Z. Gao, J. Zhang, N. Lin, S. Veronesi, Z. Wang, X. Zhao and X. Tao, RSC Adv., 2017, 7, 21815
    DOI: 10.1039/C7RA01905J

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