Jump to main content
Jump to site search

Issue 18, 2017
Previous Article Next Article

Metal–insulator–semiconductor field-effect transistors (MISFETs) using p-type SnS and nanometer-thick Al2S3 layers

Author affiliations

Abstract

Novel and cost-effective metal–insulator semiconductor field-effect transistor (MISFET) devices were fabricated using non-toxic tin mono sulfide (SnS) as the active layer sandwiched between aluminium and silver contacts with an unintentionally grown aluminium sulfide (Al2S3) interface layer. MISFET devices exhibit a high turn-on voltage of 5.13 V and excellent rectifying diode characteristics. These devices also show a high rectification factor of 1383 at a bias voltage of 6 V and series resistance of 3.4 MΩ, along with a very low leakage current of ∼10−9 A@−10 V. The overall results reveal that it could be possible to fabricate cost-effective and non-toxic MISFET devices by using SnS as an active layer for various power-electronic applications.

Graphical abstract: Metal–insulator–semiconductor field-effect transistors (MISFETs) using p-type SnS and nanometer-thick Al2S3 layers

Back to tab navigation

Supplementary files

Publication details

The article was received on 02 Jan 2017, accepted on 08 Feb 2017 and first published on 16 Feb 2017


Article type: Paper
DOI: 10.1039/C7RA00041C
Citation: RSC Adv., 2017,7, 11111-11117
  • Open access: Creative Commons BY license
  •   Request permissions

    Metal–insulator–semiconductor field-effect transistors (MISFETs) using p-type SnS and nanometer-thick Al2S3 layers

    D. Mudusu, K. R. Nandanapalli, S. R. Dugasani, R. Karuppannan, G. Kothakota Ramakrishna Reddy, R. G. Erode Subramanian and S. H. Park, RSC Adv., 2017, 7, 11111
    DOI: 10.1039/C7RA00041C

    This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material.

    Reproduced material should be attributed as follows:

    • For reproduction of material from NJC:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the Centre National de la Recherche Scientifique (CNRS) and the RSC.
    • For reproduction of material from PCCP:
      [Original citation] - Published by the PCCP Owner Societies.
    • For reproduction of material from PPS:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
    • For reproduction of material from all other RSC journals:
      [Original citation] - Published by The Royal Society of Chemistry.

    Information about reproducing material from RSC articles with different licences is available on our Permission Requests page.

Search articles by author

Spotlight

Advertisements