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Issue 29, 2017, Issue in Progress
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Dually crosslinkable SiO2@polysiloxane core–shell nanoparticles for flexible gate dielectric insulators

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Abstract

A hybrid gate dielectric material for flexible OTFT is developed by using core–shell nanoparticles (SiO2@PSRXL) where the core and the shell consist of silica nanoparticles and polysiloxane resin, respectively. Since polysiloxane resin contains both thermal- and photo-crosslinkable functional groups, densely-crosslinked thin gate dielectric films can be easily prepared on various substrates by conventional solution casting followed by dual crosslinking. SiO2@PSRXL films exhibit high thermal stability (weight loss at 300 °C is smaller than 3 wt%). The dielectric films made of SiO2@PSRXL show an exceptionally low leakage current and no breakdown voltage up to 4.3 MV cm−1, which are comparable to those of silica dielectrics prepared by CVD. OTFT devices based on dibenzothiopheno[6,5-b:6′,5′-f]thieno[3,2-b]thiophene (DTBTT) as a semiconductor and SiO2@PSRXL as a gate dielectric exhibit good hole mobility (2.5 cm2 V−1 s−1) and Ion/Ioff ratio (106).

Graphical abstract: Dually crosslinkable SiO2@polysiloxane core–shell nanoparticles for flexible gate dielectric insulators

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Publication details

The article was received on 15 Dec 2016, accepted on 13 Mar 2017 and first published on 23 Mar 2017


Article type: Paper
DOI: 10.1039/C6RA28230J
Citation: RSC Adv., 2017,7, 17841-17847
  • Open access: Creative Commons BY license
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    Dually crosslinkable SiO2@polysiloxane core–shell nanoparticles for flexible gate dielectric insulators

    E. Lee, J. Jung, A. Choi, X. Bulliard, J. Kim, Y. Yun, J. Kim, J. Park, S. Lee and Y. Kang, RSC Adv., 2017, 7, 17841
    DOI: 10.1039/C6RA28230J

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