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Issue 27, 2017, Issue in Progress
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Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

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Abstract

The resistive switching behaviors of AlOX/HfOX bilayer structures were investigated. Metal oxides were deposited by atomic layer deposition. Al and Pt were used as top and bottom electrodes, respectively. Compared with AlOX and HfOX monolayer structures, the bilayer structure showed lower set/reset voltages and more-uniform resistive switching properties. It also exhibited good data retention and endurance. The Al top electrode may gather oxygen ions from the oxide layer underneath and thereby create oxygen vacancies in the oxide layer. The uniform electrical property of the bilayer structure is attributed to confined formation/rupture of conductive filaments in the HfOX layer, whereas undissociated filaments in the AlOX layer nucleate rapid regeneration of filaments.

Graphical abstract: Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

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Publication details

The article was received on 16 Nov 2016, accepted on 07 Mar 2017 and first published on 15 Mar 2017


Article type: Paper
DOI: 10.1039/C6RA26872B
Citation: RSC Adv., 2017,7, 16704-16708
  • Open access: Creative Commons BY-NC license
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    Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

    M. Akbari, M. Kim, D. Kim and J. Lee, RSC Adv., 2017, 7, 16704
    DOI: 10.1039/C6RA26872B

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