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Issue 4, 2017
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Second-generation hexavalent molybdenum oxo-amidinate precursors for atomic layer deposition

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Abstract

The synthesis of molybdenum oxo-amidinate complexes MoO2(R2AMD)2 [AMD = N,N′-di-R-acetamidinate; R = Cy (2; cyclohexyl) and iPr (3)], and their characterization by 1H, 13C NMR, X-ray diffraction, and thermogravimetric analysis is reported. Quartz-crystal microbalance and X-ray photoelectron spectroscopic studies confirm that 3 is an improved ALD precursor versus the R = t-butyl derivative for MoO3 film growth. Complex 3 is accessible in higher yields (80%+), is easier to handle without mass loss, and in conjunction with O3 as the second ALD reagent, yields nitride-free MoO3 films.

Graphical abstract: Second-generation hexavalent molybdenum oxo-amidinate precursors for atomic layer deposition

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Publication details

The article was received on 13 Oct 2016, accepted on 22 Dec 2016 and first published on 22 Dec 2016


Article type: Paper
DOI: 10.1039/C6DT03952A
Citation: Dalton Trans., 2017,46, 1172-1178
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    Second-generation hexavalent molybdenum oxo-amidinate precursors for atomic layer deposition

    T. Jurca, A. W. Peters, A. R. Mouat, O. K. Farha, J. T. Hupp, T. L. Lohr, M. Delferro and T. J. Marks, Dalton Trans., 2017, 46, 1172
    DOI: 10.1039/C6DT03952A

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