Current emission from P-doped SiC nanowires with ultralow turn-on fields

Shanliang Chen; Minghui Shang; Zuobao Yang; Jinju Zheng; Lin Wang; Qiao Liu; Fengmei Gao; Weiyou Yang

doi:10.1039/C6TC01823H

Current emission from P-doped SiC nanowires with ultralow turn-on fields

Shanliang Chen,^a Minghui Shang,^a Zuobao Yang,^a Jinju Zheng,^a Lin Wang,^a Qiao Liu,^a Fengmei Gao*^a and Weiyou Yang*^a

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* Corresponding authors

^a Institute of Materials, Ningbo University of Technology, Ningbo City, P. R. China
E-mail: fmgao@163.com, weiyouyang@tsinghua.org.cn
Fax: +86-574-87081221
Tel: +86-574-87080966

Abstract

In the present work, we reported the current emission from P-doped SiC nanowire field emitters, which were synthesized via catalyst-assisted pyrolysis of polysilazane precursors. Directed by F–N theory for enhanced field emission (FE) behaviors, the emitters were grown into nanostructures with two desired characteristics, namely with an ultrahigh aspect ratio as well as incorporated P dopants, which brought profound enhancements to the field enhancement factor (β) and turn-on field (E_to). The as-grown SiC nanowires (SiCNWs) exhibit an aspect ratio over 1500 with a uniform spatial distribution of P dopants. The FE measurements exhibit that the SiCNWs possessed a field enhancement factor up to 11 657 and an ultralow E_to of 0.47 V μm⁻¹, which was little achieved among the reported studies. The current emission fluctuations are ∼±4.0% over 5 h, suggesting their good electron emission stability. We mainly attributed the totally excellent FE performances to the ultra-high aspect ratio and the incorporated P dopants of the obtained SiCNWs, which could synergistically cause a significant increase of the field enhancement factor and a decrease of the work function.

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Publication details

The article was received on 04 May 2016, accepted on 14 Jul 2016 and first published on 19 Jul 2016

Article type: Communication

DOI: 10.1039/C6TC01823H

Citation: J. Mater. Chem. C, 2016,4, 7391-7396

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Current emission from P-doped SiC nanowires with ultralow turn-on fields

S. Chen, M. Shang, Z. Yang, J. Zheng, L. Wang, Q. Liu, F. Gao and W. Yang, J. Mater. Chem. C, 2016, 4, 7391
DOI: 10.1039/C6TC01823H
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Journal of Materials Chemistry C

Current emission from P-doped SiC nanowires with ultralow turn-on fields

Abstract

Supplementary files

Publication details

Current emission from P-doped SiC nanowires with ultralow turn-on fields

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